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Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFH 60N20F IXFT 60N20F
VDSS ID25 RDS(on)
= = =
200V 60A 38m
trr 200 ns
TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings
(TAB)
200 200 20 30 60 240 60 35 1.5 10 315 -55 ... +150 150 -55 ... +150 300
V V V V A A A mJ J V/ns W C C C C
G = Gate, S = Source,
TO-268 (IXFT) Case Style
G S D = Drain, TAB = Drain
(TAB)
Features
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1.13/10 Nm/lb.in. 6 4 g g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V 100 nA 50 A 1.5 mA 38 m
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 125C
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DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers
Advantages
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Space savings High power density
(c) 2002 IXYS All rights reserved
98885 (1/02)
IXFH 60N20F IXFT 60N20F
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 18 26 2930 VGS = 0 V, VDS = 25 V, f = 1 MHz 940 320 15 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.0 (External) 14 42 7.0 100 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 46 S pF pF pF ns ns ns ns nC nC nC 0.39 K/W (TO-247) 0.25 K/W
Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1 2 3
TO-247 AD Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 240 1.5 200 A
TO-268 Outline A V ns C A
IF = 25A,-di/dt = 100 A/s, VR = 100 V
0.8 10
Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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